Tcursor® series: Ts-Ti9

Characteristics

  • Melting point: -20°C
  • Vapor pressure: 0.1Torr (59°C)
  • Sufficient volatility and thermal stability
  • Short incubation time
  • High deposition rate

Thermal Properties

TG curves of Ti precursors

Ar 400ml/min 10°C/min

DSC curves of Ti precursors

Sealed under Argon 10°C/min

Thermal CVD with O₂

Reactant: O₂

Reactant: O₂