Semiconductor Targets Aluminum Copper Tantalum Titanium Other Powdered Metals Chemical Precursors RuDER® for Ru and RuO2 Tcursor® series: Rudense® for Area Selective Deposition Ts-Ir5 Ts-Co10 Ts-Ti9 Ts-Ta7 Ts-Nb10 Ts-Hf3 Ts-Zr2 SiTBA S SiTBIS TD-50 TG-4E Flat Panel Display and Solar Panel Targets Organic Light Emitting Diode Conflict Minerals Tcursor® series: Ts-Ta7 Characteristics Melting point: 11°C Vapor pressure: 0.1Torr (46°C) Very high vapor pressure High thermal stability Liquid at room temperature Very high reactivity with oxygen Thermal Properties Thermal CVD with O₂