Semiconductor Targets Aluminum Copper Tantalum Titanium Other Powdered Metals Chemical Precursors RuDER® for Ru and RuO2 Tcursor® series: Rudense® for Area Selective Deposition Ts-Ir5 Ts-Co10 Ts-Ti9 Ts-Ta7 Ts-Nb10 Ts-Hf3 Ts-Zr2 SiTBA S SiTBIS TD-50 TG-4E Flat Panel Display and Solar Panel Targets Organic Light Emitting Diode Conflict Minerals Tcursor® series: Ts-Nb10 Characteristics Melting point: 20°C Vapor pressure: 0.1Torr (50°C) Very high vapor pressure Liquid at room temperature High reactivity with oxygen Excellent step coverage Thermal Properties Thermal CVD with O₂