Tcursor® series: Ts-Co10 for Area Selective Deposition

Characteristics

Melting point: 15°C
Vapor pressure: 0.1Torr (75°C)
Viscosity: 35cP (25°C)
Good volatility
Low decomposition temperature
High nucleation density

Thermal Properties

TG curves of Ts-Ir5 and Ir(EtCp)(COD)

Ts-Ir5_1

DSC curves of Ts-Ir5 and IrTs-Ir5

Ts-Ir5_2

Film Properties

Ts-Ir5

Ts-Ir5_3

Thickness: 32nm
RMS:1.2nm

Ir(EtCp)(COD)

Ts-Ir5_4

Thickness: 25nm
RMS:6.6nm

Film Composition

Ts-Ir5_5

Method: ALD
Deposition Temperature: 300°C
Reactant: O₂