Process

Element

Precursor

Characteristics

MOCVD

Metal

Ru

RuDER®

 Melting point

 : 17°C

• Extremely short incubation time

• Higher nucleation density than Ru(EtCp)₂

• Excellent step coverage

Vapor pressure

: 0.1Torr (@75°C)

Decomp. Temp.

: 270°C

Viscosity 

: 7cp (@25°C) 

Rudense®

 Melting point

 : 28°C

• Area selective Ru deposition under reductive condition

• Extremely short incubation time

• Excellent step coverage

Vapor pressure

: 0.1Torr (@76°C)

Decomp. Temp.

: 230°C

Viscosity 

: 15cp (@65°C) 

Ir

Ts-Ir5

 Melting point

 : 15°C

• High thermal stability

• No incubation time

• High nucleation density

Vapor pressure

: 0.1Torr (@75°C)

Decomp. Temp.

: 300°C

Viscosity  

: 35cP (@25°C) 

Co

Ts-Co10

Melting point

 : < -20°C

•  Area selective Co deposition under reductive condition

• Co-film deposition at low temperature (≤200°C)

• High deposition rate and excellent step coverage

Vapor pressure

: 0.1Torr (@88°C)

Decomp. Temp.

: 214°C

Viscosity  

: no data 

Oxide

Ti

Ts-Ti9

Melting point

 : < -20°C

• Extremely short incubation time

• High deposition rate

• Excellent step coverage

Vapor pressure

: 0.1Torr (@59°C)

Decomp. Temp.

: 340°C

Viscosity  

: no data 

Ta

Ts-Ta7

Melting point

 : 11°C

• High vapor pressure

• High reactivity with O₂

• Excellent step coverage

Vapor pressure

: 0.1Torr (@46°C)

Decomp. Temp.

: 240°C

Viscosity  

: no data 

Nb

Ts-Nb10

Melting point

 : 20°C

• High vapor pressure

• High reactivity with O₂

• Excellent step coverage

Vapor pressure

: 0.1Torr (@50°C)

Decomp. Temp.

: 260°C

Viscosity  

: no data 

Hf

Ts-Hf3

 Melting point

 : < -20°C

• High vapor pressure

• High deposition rate compared to TEMAHf

• Excellent step coverage

Vapor pressure

: 0.1Torr (@77°C)

Decomp. Temp.

: 236°C

Viscosity  

: no data 

Zr

Ts-Zr2

Melting point

 : < -20°C

• High vapor pressure

• Sufficient thermal stability

• High deposition rate compared to TEMAZr

Vapor pressure

: 0.1Torr (@68°C)

Decomp. Temp.

: 242°C

Viscosity  

: no data 

Bi

Ts-Bi6

Melting point

 : < -20°C

•  No danger of explosion below 88 degC

• High vapor pressure compared to BiPh₃

• Sufficient thermal stability

Vapor pressure

: 0.1Torr (@55°C)

Decomp. Temp.

: 230°C

Viscosity  

: 7cP (@25°C) 

Al

Ts-Al4

Melting point

 : < -15°C

• Non-pyrophoric

• Liquid at room temperature

• High vapor pressure compared to Al(NEt₂)₃

Vapor pressure

: 0.1Torr (@44°C)

Decomp. Temp.

: 328°C

Viscosity  

: no data 

Si

SiTBAS®

Melting point

 : liquid at rt

• Sufficient thermal stability

• High reactivity with O₂

• High deposition rate compared to TDMAS

Vapor pressure

: 0.1Torr (@28°C)

Decomp. Temp.

: 320°C

Viscosity  

: no data 

Nitride

Si

SiTBIS®

Melting point

 : < -20°C

• High thermal stability

• React with NH₃ at 400°C

• Excellent step coverage

Vapor pressure

: 0.1Torr (@34°C)

Decomp. Temp.

: 300°C

Viscosity  

: no data 

PECVD

Low-k

SiOCH

TD-50

Melting point

 : < -20°C

• Good vapor pressure and thermal stability

• Porogen free process

• k=2.55, Modulus 7GPa

Vapor pressure

: 1Torr (@86°C)

Decomp. Temp.

: 237°C

Viscosity  

: no data 

Gas

Barrier

SiO₂

TG-4E

Flash point

 : 53°C

• High gas barrier

   

  WVTR=2.4×10^-4 g/m²/day

• Colorless and transparent film

• Good flexibility with high-barrier performance

Vapor pressure

: 100Torr (@124°C)

Decomp. Temp.

: 290°C

Viscosity  

: no data